Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ649 2SJ649

Manufacturer: Renesas Electronics America
Win Source Part Number: 038927-2SJ649
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220 Isolated Tab
Dimension: TO-220-3 Isolated Tab
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 20A (Tc)
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1900pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 48 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited

MOSFET P-CH 60V 20A TO-220 Product overview: 2SJ649 from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 20A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 20A, TO-220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SJ649 can be used for catalog matching and distributor lookup.