Renesas Electronics Corporation 60V 20A TO-220 MOSFET Transistor 2SJ649

Description
MOSFET P-CH 60V 20A TO-220 Product overview: 2SJ649 from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 20A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 20A, TO-220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SJ649 can be used for catalog matching and distributor lookup.
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Description
MOSFET P-CH 60V 20A TO-220 Product overview: 2SJ649 from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 20A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 20A, TO-220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SJ649 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
60V 20A TO-220 MOSFET Transistor
285-2SJ649
60V 20A TO-220 MOSFET Transistor 285-2SJ649
MOSFET P-CH 60V 20A TO-220 Product overview: 2SJ649 from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 20A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 20A, TO-220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SJ649 can be used for catalog matching and distributor lookup.

MOSFET P-CH 60V 20A TO-220 Product overview: 2SJ649 from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 20A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 20A, TO-220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SJ649 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ649 - 038927-2SJ649 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ649
038927-2SJ649
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ649 038927-2SJ649
Manufacturer: Renesas Electronics America Win Source Part Number: 038927-2SJ649 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220 Isolated Tab Dimension: TO-220-3 Isolated Tab Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 20A (Tc) Max Gate Charge: 38nC @ 10V Max Input Capacitance: 1900pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 48 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited

Manufacturer: Renesas Electronics America
Win Source Part Number: 038927-2SJ649
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220 Isolated Tab
Dimension: TO-220-3 Isolated Tab
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 20A (Tc)
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1900pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 48 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 285-2SJ649 038927-2SJ649
Product Name 60V 20A TO-220 MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ649
Polarity P-Channel P-Channel; P-Channel
PD 2000 milliwatts 2000 to 25000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
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