Manufacturer: Renesas Electronics America
Win Source Part Number: 197580-2SJ649-AZ
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220 Isolated Tab
Dimension: TO-220-3 Isolated Tab
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 20A (Tc)
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1900pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 48 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
P-Channel 60V 20A (Tc) 2W (Ta), 25W (Tc) Through Hole TO-220 Isolated Tab
MOSFET P-CH 60V 20A TO220
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 197580-2SJ649-AZ | 2SJ649-AZ-ND | 2SJ649-AZ | 2SJ649-AZ |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ649-AZ | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | ||
| V(BR)DSS | 60 volts | |||
| PD | 2000 to 25000 milliwatts |
