Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ601-AZ 2SJ601-AZ

Description
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1016489-2SJ601-AZ Mounting: SMD (SMT) Number of Elements: 1 Power Dissipation: 1 W Rise Time: 12 ns Fall Time: 53 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-251 Alternative Parts (Cross-Reference): IPS105N03L G; FDU2572; FCU900N60Z; SPS02N60C3; HUF75329D3; RFD16N052SJ601AZ; Popularity: Low Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Turn-On Delay Time: 11 ns Continuous Drain Current (ID): 36 A Turn-Off Delay Time: 80 ns Gate to Source Voltage (Vgs): 20 V
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Description
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1016489-2SJ601-AZ Mounting: SMD (SMT) Number of Elements: 1 Power Dissipation: 1 W Rise Time: 12 ns Fall Time: 53 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-251 Alternative Parts (Cross-Reference): IPS105N03L G; FDU2572; FCU900N60Z; SPS02N60C3; HUF75329D3; RFD16N052SJ601AZ; Popularity: Low Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Turn-On Delay Time: 11 ns Continuous Drain Current (ID): 36 A Turn-Off Delay Time: 80 ns Gate to Source Voltage (Vgs): 20 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ601-AZ - 1016489-2SJ601-AZ - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ601-AZ
1016489-2SJ601-AZ
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ601-AZ 1016489-2SJ601-AZ
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1016489-2SJ601-AZ Mounting: SMD (SMT) Number of Elements: 1 Power Dissipation: 1 W Rise Time: 12 ns Fall Time: 53 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-251 Alternative Parts (Cross-Reference): IPS105N03L G; FDU2572; FCU900N60Z; SPS02N60C3; HUF75329D3; RFD16N052SJ601AZ; Popularity: Low Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Turn-On Delay Time: 11 ns Continuous Drain Current (ID): 36 A Turn-Off Delay Time: 80 ns Gate to Source Voltage (Vgs): 20 V

Manufacturer: Renesas Electronics America
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1016489-2SJ601-AZ
Mounting: SMD (SMT)
Number of Elements: 1
Power Dissipation: 1 W
Rise Time: 12 ns
Fall Time: 53 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TO-251
Alternative Parts (Cross-Reference): IPS105N03L G; FDU2572; FCU900N60Z; SPS02N60C3; HUF75329D3; RFD16N052SJ601AZ;
Popularity: Low
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Lead Free: Yes
Mount: Through Hole
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Turn-On Delay Time: 11 ns
Continuous Drain Current (ID): 36 A
Turn-Off Delay Time: 80 ns
Gate to Source Voltage (Vgs): 20 V

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1016489-2SJ601-AZ
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ601-AZ
PD 1000 milliwatts
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