Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 2SJ559-T1-A

The 2SJ559 is a P-channel MOSFET designed for high-speed switching applications and can be driven directly by a 2.5 V power source. It is packaged in an SC-75 (USM) case, a surface-mount SMD package. The device has a drain-source voltage rating of -30 V, a continuous drain current of -0.1 A, and a total power dissipation of 200 mW when mounted on a ceramic substrate. Its gate-source cut-off voltage ranges from -1.0 V to -1.7 V, and its on-state resistance is 6.0 Ω at -10 V gate-source voltage and -10 mA drain current. Input, output, and reverse transfer capacitances are 5.0 pF, 15 pF, and 1.3 pF respectively, measured at 1 MHz. The part includes a gate-source ESD protection diode but requires external protection for voltages exceeding ratings. It meets Standard quality grade per Renesas classification and is suitable for consumer, office, and industrial electronics.