Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 2SJ559-T1-A

Description
Win Source Part Number: 1011507-2SJ559-T1-A Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 13Ohm @ 10mA, 10V Vgs(th) (Max) @ Id: 1.7V @ 10µA Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75-3, USM Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 3 V ECCN: EAR99 Fake Threat In the Open Market: 75 pct. HTSUS: 8541.21.0095 Mfr: Renesas Electronics America Inc Other Names: RENRNS2SJ559-T1-A,21 56-2SJ559-T1-A
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Description
Win Source Part Number: 1011507-2SJ559-T1-A Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 13Ohm @ 10mA, 10V Vgs(th) (Max) @ Id: 1.7V @ 10µA Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75-3, USM Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 3 V ECCN: EAR99 Fake Threat In the Open Market: 75 pct. HTSUS: 8541.21.0095 Mfr: Renesas Electronics America Inc Other Names: RENRNS2SJ559-T1-A,21 56-2SJ559-T1-A
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1011507-2SJ559-T1-A - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1011507-2SJ559-T1-A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1011507-2SJ559-T1-A
Win Source Part Number: 1011507-2SJ559-T1-A Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 13Ohm @ 10mA, 10V Vgs(th) (Max) @ Id: 1.7V @ 10µA Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75-3, USM Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 3 V ECCN: EAR99 Fake Threat In the Open Market: 75 pct. HTSUS: 8541.21.0095 Mfr: Renesas Electronics America Inc Other Names: RENRNS2SJ559-T1-A,21 56-2SJ559-T1-A

Win Source Part Number: 1011507-2SJ559-T1-A
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Bulk
Standard Package: 1
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id: 1.7V @ 10µA
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75-3, USM
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 3 V
ECCN: EAR99
Fake Threat In the Open Market: 75 pct.
HTSUS: 8541.21.0095
Mfr: Renesas Electronics America Inc
Other Names: RENRNS2SJ559-T1-A,2156-2SJ559-T1-A

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1011507-2SJ559-T1-A
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Polarity P-Channel
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