Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ555-E 2SJ555-E

Description
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1037554-2SJ555-E Drain to Source Voltage (Vdss): 60 V Number of Elements: 1 Power Dissipation: 125 W Number of Pins: 3 Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): FDP14AN06LA0; IRFB7546PBF; IRFZ48VPBF; IRF1010EZPBF; RFP70N06; NDP70602SJ555(E); 2SJ555E; Popularity: Low Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Continuous Drain Current (ID): 60 A
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Description
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1037554-2SJ555-E Drain to Source Voltage (Vdss): 60 V Number of Elements: 1 Power Dissipation: 125 W Number of Pins: 3 Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): FDP14AN06LA0; IRFB7546PBF; IRFZ48VPBF; IRF1010EZPBF; RFP70N06; NDP70602SJ555(E); 2SJ555E; Popularity: Low Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Continuous Drain Current (ID): 60 A
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ555-E - 1037554-2SJ555-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ555-E
1037554-2SJ555-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ555-E 1037554-2SJ555-E
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1037554-2SJ555-E Drain to Source Voltage (Vdss): 60 V Number of Elements: 1 Power Dissipation: 125 W Number of Pins: 3 Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): FDP14AN06LA0; IRFB7546PBF; IRFZ48VPBF; IRF1010EZPBF; RFP70N06; NDP70602SJ555(E); 2SJ555E; Popularity: Low Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Continuous Drain Current (ID): 60 A

Manufacturer: Renesas Electronics America
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1037554-2SJ555-E
Drain to Source Voltage (Vdss): 60 V
Number of Elements: 1
Power Dissipation: 125 W
Number of Pins: 3
Categories: Transistors - FETs, MOSFETs - RF
Alternative Parts (Cross-Reference): FDP14AN06LA0; IRFB7546PBF; IRFZ48VPBF; IRF1010EZPBF; RFP70N06; NDP70602SJ555(E); 2SJ555E;
Popularity: Low
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Lead Free: Yes
Mount: Through Hole
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Continuous Drain Current (ID): 60 A

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1037554-2SJ555-E
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ555-E
PD 125000 milliwatts
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