Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 2SJ542-E

Description
Win Source Part Number: 1037552-2SJ542-E Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Bulk Standard Package: 1 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 60W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V Vgs (Max): ±20V Temperature Range - Operating: 150°C Alternative Parts (Cross-Reference): IRF9Z34NPBF; FQP20N06L; AUIRF9Z34N; HUF75309P3; HUFA75309P3; HUF76013P32SJ542E; ECCN: EAR99 Fake Threat In the Open Market: 49 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 0000.00.0000 Mfr: Renesas Electronics America Inc Other Names: RENRNS2SJ542-E,2156- 2SJ542-E
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1037552-2SJ542-E - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SJ542-E - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
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Description
Win Source Part Number: 1037552-2SJ542-E Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Bulk Standard Package: 1 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 60W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V Vgs (Max): ±20V Temperature Range - Operating: 150°C Alternative Parts (Cross-Reference): IRF9Z34NPBF; FQP20N06L; AUIRF9Z34N; HUF75309P3; HUFA75309P3; HUF76013P32SJ542E; ECCN: EAR99 Fake Threat In the Open Market: 49 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 0000.00.0000 Mfr: Renesas Electronics America Inc Other Names: RENRNS2SJ542-E,2156- 2SJ542-E
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1037552-2SJ542-E - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1037552-2SJ542-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1037552-2SJ542-E
Win Source Part Number: 1037552-2SJ542-E Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Bulk Standard Package: 1 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 60W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V Vgs (Max): ±20V Temperature Range - Operating: 150°C Alternative Parts (Cross-Reference): IRF9Z34NPBF; FQP20N06L; AUIRF9Z34N; HUF75309P3; HUFA75309P3; HUF76013P32SJ542E; ECCN: EAR99 Fake Threat In the Open Market: 49 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 0000.00.0000 Mfr: Renesas Electronics America Inc Other Names: RENRNS2SJ542-E,2156- 2SJ542-E

Win Source Part Number: 1037552-2SJ542-E
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Bulk
Standard Package: 1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 60W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Vgs (Max): ±20V
Temperature Range - Operating: 150°C
Alternative Parts (Cross-Reference): IRF9Z34NPBF; FQP20N06L; AUIRF9Z34N; HUF75309P3; HUFA75309P3; HUF76013P32SJ542E;
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 0000.00.0000
Mfr: Renesas Electronics America Inc
Other Names: RENRNS2SJ542-E,2156-2SJ542-E

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SJ542-E - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2SJ542-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2SJ542-E
MOSFET N-CH 60V 18A TO220AB

MOSFET N-CH 60V 18A TO220AB

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Technical Specifications

  Win Source Electronics Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1037552-2SJ542-E 2SJ542-E
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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