Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2SJ361RYTR-E

Description
POWER FIELD-EFFECT TRANSISTOR, 2
Description
POWER FIELD-EFFECT TRANSISTOR, 2

Suppliers

Company
Product
Description
Supplier Links
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2SJ361RYTR-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2SJ361RYTR-E
POWER FIELD-EFFECT TRANSISTOR, 2

POWER FIELD-EFFECT TRANSISTOR, 2

Supplier's Site

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors
Product Number 2SJ361RYTR-E
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Packing Method Bulk; Bulk
Unlock Full Specs
to access all available technical data

Similar Products

40V 84A MOSFET Transistor - 278-AUIRFN8401TR - ERSAELECTRONICS PTE. LTD.
Specs
PD 4200 milliwatts
TJ -55 to 175 C (-67 to 347 F)
Package Type Tape & Reel (TR)
View Details
5 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2SA1052MCTR-E - 855018-2SA1052MCTR-E - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
DC - 6 GHz, 15 Watt, 28 V GaN RF Power Transistor - T2G6001528-Q3 - Qorvo
Specs
Transistor Technology / Material GaN
Package Type NI-200
Power Gain 15.5 dB
View Details
4 suppliers