Renesas Electronics Corporation P-Channel MOSFET Transistor 2SJ358C-T1-AZ

2SJ358C-T1-AZ - P-CHANNEL MOS FE Product overview: 2SJ358C-T1-AZ from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2SJ358C-T1-AZ can be used for catalog matching and distributor lookup.

Win Source Part Number: 1037533-2SJ358C-T1-AZ
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Bulk
Standard Package: 1
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 143mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Package / Case: TO-243AA
Supplier Device Package: MP-2
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V
Vgs (Max): ±20V
Temperature Range - Operating: 150°C
ECCN: EAR99
Fake Threat In the Open Market: 61 pct.
REACH Status: Vendor Undefined
HTSUS: 8541.21.0075
Mfr: Renesas
Other Names: 2156-2SJ358C-T1-AZ
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
RoHS Status: RoHS non-compliant