Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 2SJ358C-T1-AZ

Description
Win Source Part Number: 1037533-2SJ358C-T1-A Z Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 143mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2W (Ta) Package / Case: TO-243AA Supplier Device Package: MP-2 Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V Vgs (Max): ±20V Temperature Range - Operating: 150°C ECCN: EAR99 Fake Threat In the Open Market: 61 pct. REACH Status: Vendor Undefined HTSUS: 8541.21.0075 Mfr: Renesas Other Names: 2156-2SJ358C-T1-AZ Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V RoHS Status: RoHS non-compliant
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Description
Win Source Part Number: 1037533-2SJ358C-T1-A Z Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 143mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2W (Ta) Package / Case: TO-243AA Supplier Device Package: MP-2 Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V Vgs (Max): ±20V Temperature Range - Operating: 150°C ECCN: EAR99 Fake Threat In the Open Market: 61 pct. REACH Status: Vendor Undefined HTSUS: 8541.21.0075 Mfr: Renesas Other Names: 2156-2SJ358C-T1-AZ Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V RoHS Status: RoHS non-compliant
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1037533-2SJ358C-T1-AZ - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1037533-2SJ358C-T1-AZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1037533-2SJ358C-T1-AZ
Win Source Part Number: 1037533-2SJ358C-T1-A Z Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 143mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2W (Ta) Package / Case: TO-243AA Supplier Device Package: MP-2 Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V Vgs (Max): ±20V Temperature Range - Operating: 150°C ECCN: EAR99 Fake Threat In the Open Market: 61 pct. REACH Status: Vendor Undefined HTSUS: 8541.21.0075 Mfr: Renesas Other Names: 2156-2SJ358C-T1-AZ Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V RoHS Status: RoHS non-compliant

Win Source Part Number: 1037533-2SJ358C-T1-AZ
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Bulk
Standard Package: 1
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 143mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Package / Case: TO-243AA
Supplier Device Package: MP-2
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V
Vgs (Max): ±20V
Temperature Range - Operating: 150°C
ECCN: EAR99
Fake Threat In the Open Market: 61 pct.
REACH Status: Vendor Undefined
HTSUS: 8541.21.0075
Mfr: Renesas
Other Names: 2156-2SJ358C-T1-AZ
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
RoHS Status: RoHS non-compliant

Buy Now
P-Channel MOSFET Transistor - 278-2SJ358C-T1-AZ - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
P-Channel MOSFET Transistor
278-2SJ358C-T1-AZ
P-Channel MOSFET Transistor 278-2SJ358C-T1-AZ
2SJ358C-T1-AZ - P-CHANNEL MOS FE Product overview: 2SJ358C-T1-AZ from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2SJ358C-T1-AZ can be used for catalog matching and distributor lookup.

2SJ358C-T1-AZ - P-CHANNEL MOS FE Product overview: 2SJ358C-T1-AZ from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2SJ358C-T1-AZ can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 2SJ358C-T1-AZ - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
2SJ358C-T1-AZ
Single FETs, MOSFETs 2SJ358C-T1-AZ
2SJ358C-T1-AZ - P-CHANNEL MOS FE

2SJ358C-T1-AZ - P-CHANNEL MOS FE

Supplier's Site Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2SJ358C-T1-AZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2SJ358C-T1-AZ
2SJ358C-T1-AZ - P-CHANNEL MOS FE

2SJ358C-T1-AZ - P-CHANNEL MOS FE

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1037533-2SJ358C-T1-AZ 278-2SJ358C-T1-AZ 2SJ358C-T1-AZ 2SJ358C-T1-AZ
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single P-Channel MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type SOT3 Bulk TO-243AA Surface Mount
PD 2000 milliwatts 2000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
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