Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2SJ356(0)-T1-AY

Description
2SJ356 - SIGNAL DEVICE
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SJ356(0)-T1-AY - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Description
2SJ356 - SIGNAL DEVICE

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SJ356(0)-T1-AY - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2SJ356(0)-T1-AY
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2SJ356(0)-T1-AY
2SJ356 - SIGNAL DEVICE

2SJ356 - SIGNAL DEVICE

Supplier's Site

Technical Specifications

  Acme Chip Technology Co., Limited
Product Category RF Transistors
Product Number 2SJ356(0)-T1-AY
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Packing Method Bulk; Bulk
Unlock Full Specs
to access all available technical data

Similar Products

NPN Bipolar Transistor - 2N2222A - Micross Components, Inc.
Micross Components, Inc.
NPN Bipolar Transistor
2N2222A
View Details
Single FETs, MOSFETs - 448-AUIRFS8408-7TRLTR-ND - DigiKey
Infineon Technologies AG
Single FETs, MOSFETs
AUIRFS8408-7TRL
Specs
Polarity N-Channel
Package Type TO-263; TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Transistor Grade / Operating Range Automotive
View Details
3 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2SC2812-7-TB-E - 855149-2SC2812-7-TB-E - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SC2812-7-TB-E
2SC2812-7-TB-E
Specs
Package Type SOT3
View Details
DC - 25 GHz, 7 Watt, 28 V GaN RF Transistor - TGF2933 - Qorvo
Qorvo
DC - 25 GHz, 7 Watt, 28 V GaN RF Transistor
TGF2933
Specs
Transistor Technology / Material GaN
Package Type die
Power Gain 15 dB
View Details
2 suppliers