Renesas Electronics Corporation Single FETs, MOSFETs 2SJ162-E

Description
P-Channel 160V 7A (Ta) 100W (Tc) Through Hole TO-3P
Request a Quote Datasheet
Description
P-Channel 160V 7A (Ta) 100W (Tc) Through Hole TO-3P
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 2SJ162-E-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2SJ162-E-ND
Single FETs, MOSFETs 2SJ162-E-ND
P-Channel 160V 7A (Ta) 100W (Tc) Through Hole TO-3P

P-Channel 160V 7A (Ta) 100W (Tc) Through Hole TO-3P

Buy Now Datasheet
FETs - Single - 2SJ162-E - 814225-2SJ162-E - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - 2SJ162-E
814225-2SJ162-E
FETs - Single - 2SJ162-E 814225-2SJ162-E
Manufacturer: Renesas Electronics America Win Source Part Number: 814225-2SJ162-E Packaging: Tube Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 160V Part Status: Obsolete (End Of Life) Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Package: TO-3P-3, SC-65-3 Power Dissipation (Maximum): 100W (Tc) Popularity: Low Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Input Capacitance (Ciss) (Maximum) at Vds: 900pF at 10V Current - Continuous Drain (Id) at 25°C: 7A Maximum Vgs: ±15V

Manufacturer: Renesas Electronics America
Win Source Part Number: 814225-2SJ162-E
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 160V
Part Status: Obsolete (End Of Life)
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Package: TO-3P-3, SC-65-3
Power Dissipation (Maximum): 100W (Tc)
Popularity: Low
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Input Capacitance (Ciss) (Maximum) at Vds: 900pF at 10V
Current - Continuous Drain (Id) at 25°C: 7A
Maximum Vgs: ±15V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SJ162-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2SJ162-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2SJ162-E
MOSFET P-CH 160V 7A TO3P

MOSFET P-CH 160V 7A TO3P

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
2SJ162-E
MOSFET 2SJ162-E
MOSFET Power MOSFET

MOSFET Power MOSFET

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2SJ162-E-ND 814225-2SJ162-E 2SJ162-E 2SJ162-E
Product Name Single FETs, MOSFETs FETs - Single - 2SJ162-E Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel
Unlock Full Specs
to access all available technical data