Renesas Electronics Corporation 2SD1581-AZ

The 2SD1581 is an NPN silicon epitaxial transistor designed for low-frequency power amplifiers and high-current drive applications such as relays and motors. It is packaged in a standard case with a maximum collector current of 2.0 A (DC) and 3.0 A (pulse), a collector-emitter voltage rating of 25 V, and a total power dissipation of 1.0 W. The transistor features an ultra-high DC current gain (hFE) ranging from 800 to 3200 at VCE = 5.0 V and IC = 500 mA, with a typical collector saturation voltage of 0.18 V at IC = 1.0 A and IB = 10 mA. The junction temperature rating is 150°C, and it has a gain-bandwidth product of 150 to 350 MHz. The device is classified as Standard quality for use in consumer, industrial, and office equipment applications.