Renesas Electronics Corporation TRANSISTORS - RF Transistors (BJT) - 2SD1164-AZ 2SD1164-AZ

Manufacturer: Renesas Electronics America
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1182008-2SD1164-AZ
Polarity: NPN
Number of Elements: 1
Categories: RF Transistors(BJT)
Case / Package: TO-252
Alternative Parts (Cross-Reference): 2SD1164AZ;
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Lead Free: Lead Free
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Max Operating Temperature: 150 °C
Collector Base Voltage (VCBO): 150 V
Collector Emitter Voltage (VCEO): 60 V
Emitter Base Voltage (VEBO): 2 V
Collector Emitter Saturation Voltage: 1.5 V

Trans Darlington NPN 60V 2A 2000mW 3-Pin(2+Tab) TO-251 Product overview: 2SD1164-AZ from Renesas Electronics Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 2A, 2000mW. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 2A, 2000mW, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SD1164-AZ can be used for catalog matching and distributor lookup.