NPN silicon RF transistor for medium output power amplification up to 2.4 GHz, in a flat-lead 4-pin thin-type super minimold (M04) package. It has a collector-to-emitter voltage rating of 5.0 V, a maximum collector current of 500 mA, and a total power dissipation of 735 mW when mounted on a 38 × 38 mm, 0.4 mm polyimide PCB. The device features a typical 1 dB compression output power of 26.0 dBm at 1.8 GHz and a collector efficiency of 60% under the same conditions. It meets the Standard quality grade for use in communications and consumer electronics applications. The part number format indicates it is supplied in 3 kpcs/reel with pin 1 (emitter) and pin 2 (collector) facing the perforation side of the tape.
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NPN silicon RF transistor for medium output power amplification up to 2.4 GHz, in a flat-lead 4-pin thin-type super minimold (M04) package. It has a collector-to-emitter voltage rating of 5.0 V, a maximum collector current of 500 mA, and a total power dissipation of 735 mW when mounted on a 38 × 38 mm, 0.4 mm polyimide PCB. The device features a typical 1 dB compression output power of 26.0 dBm at 1.8 GHz and a collector efficiency of 60% under the same conditions. It meets the Standard quality grade for use in communications and consumer electronics applications. The part number format indicates it is supplied in 3 kpcs/reel with pin 1 (emitter) and pin 2 (collector) facing the perforation side of the tape.
