Renesas Electronics Corporation 2SC5336-T1-AZ

NPN silicon RF transistor for high-frequency low distortion amplifier, packaged in a 4-pin power minimold with dimensions of 4.5 mm × 2.1 mm × 1.6 mm, designed for surface-mount applications on a 16 cm² ceramic substrate. It has a collector-to-emitter voltage rating of 12 V, collector current of 100 mA, and total power dissipation of 1.2 W. The device features a typical gain of 12 dB at 1 GHz, gain-bandwidth product of 6.5 GHz, and noise figure of 1.1 dB at 1 GHz and 7 mA collector current. Junction and storage temperature ranges are -65 °C to +150 °C. Complies with standard quality grade for general electronic applications.