Renesas Electronics Corporation 2SC5010-T1-A

Description
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN
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Description
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN
Request a Quote
Datasheet
Datasheet Summary
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The 2SC5010 is an NPN silicon epitaxial transistor designed for low-noise and small-signal amplification in VHF to L band applications. It is packaged in an ultra super mini mold package measuring 1.6 mm × 0.8 mm × 0.5 mm. The device has a collector-to-emitter voltage rating of 6 V, a collector current of 30 mA, and a total power dissipation of 125 mW. It features a typical transition frequency of 12.0 GHz, a typical noise figure of 1.5 dB at 2 GHz, and a typical collector-base capacitance of 0.4 pF. The transistor is classified as "Standard" quality and is supplied in 3 kpcs/reel with 8 mm embossed tape packaging.

Datasheet Summary
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The 2SC5010 is an NPN silicon epitaxial transistor designed for low-noise and small-signal amplification in VHF to L band applications. It is packaged in an ultra super mini mold package measuring 1.6 mm × 0.8 mm × 0.5 mm. The device has a collector-to-emitter voltage rating of 6 V, a collector current of 30 mA, and a total power dissipation of 125 mW. It features a typical transition frequency of 12.0 GHz, a typical noise figure of 1.5 dB at 2 GHz, and a typical collector-base capacitance of 0.4 pF. The transistor is classified as "Standard" quality and is supplied in 3 kpcs/reel with 8 mm embossed tape packaging.

Suppliers

Company
Product
Description
Supplier Links
 - 2SC5010-T1-A - Rochester Electronics
Newburyport, MA, United States
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN

RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number 2SC5010-T1-A
Polarity NPN
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