Renesas Electronics Corporation 2SC5006-T1-A

Description
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
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Description
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
Request a Quote
Datasheet
Datasheet Summary
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The 2SC5006-T1-A is an NPN silicon epitaxial transistor in an Ultra Super Mini Mold package for low-noise, high-frequency amplification in VHF to UHF bands. It features a gain-bandwidth product of 4.5 GHz typ. at VCE = 3 V and IC = 7 mA, a noise figure of 1.2 dB typ. at the same conditions, and a feedback capacitance of 0.7 pF typ. The device has a maximum collector-emitter voltage of 12 V, collector current of 100 mA, and total power dissipation of 125 mW. It is supplied in 3 kpcs/reel packaging. The part meets the Standard quality grade and is not designed for radiation environments.

Datasheet Summary
Powered by GS/AI

The 2SC5006-T1-A is an NPN silicon epitaxial transistor in an Ultra Super Mini Mold package for low-noise, high-frequency amplification in VHF to UHF bands. It features a gain-bandwidth product of 4.5 GHz typ. at VCE = 3 V and IC = 7 mA, a noise figure of 1.2 dB typ. at the same conditions, and a feedback capacitance of 0.7 pF typ. The device has a maximum collector-emitter voltage of 12 V, collector current of 100 mA, and total power dissipation of 125 mW. It is supplied in 3 kpcs/reel packaging. The part meets the Standard quality grade and is not designed for radiation environments.

Suppliers

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Product
Description
Supplier Links
 - 2SC5006-T1-A - Rochester Electronics
Newburyport, MA, United States
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number 2SC5006-T1-A
Polarity NPN
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