Renesas Electronics Corporation Bipolar RF Transistors 2SC4228-T1-A

Description
RF 0.035A, ULTRA HIGH FREQ BAND
Description
RF 0.035A, ULTRA HIGH FREQ BAND
Datasheet
Datasheet Summary
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The 2SC4228 is an NPN silicon RF transistor for high-frequency low-noise amplification in VHF and UHF applications, packaged in a 3-pin super minimold surface-mount format. It operates with a maximum collector-to-emitter voltage of 10 V and a collector current of 35 mA, dissipating up to 150 mW in free air. At VCE = 3 V and IC = 5 mA, it achieves a typical noise figure of 1.9 dB and insertion power gain of 7.5 dB at 2 GHz, with a gain-bandwidth product of 8.0 GHz. The device meets a junction temperature limit of 150 °C and is rated for storage from -65 °C to +150 °C.

Datasheet Summary
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The 2SC4228 is an NPN silicon RF transistor for high-frequency low-noise amplification in VHF and UHF applications, packaged in a 3-pin super minimold surface-mount format. It operates with a maximum collector-to-emitter voltage of 10 V and a collector current of 35 mA, dissipating up to 150 mW in free air. At VCE = 3 V and IC = 5 mA, it achieves a typical noise figure of 1.9 dB and insertion power gain of 7.5 dB at 2 GHz, with a gain-bandwidth product of 8.0 GHz. The device meets a junction temperature limit of 150 °C and is rated for storage from -65 °C to +150 °C.

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Bipolar RF Transistors - 2SC4228-T1-A - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
2SC4228-T1-A
Bipolar RF Transistors 2SC4228-T1-A
RF 0.035A, ULTRA HIGH FREQ BAND

RF 0.035A, ULTRA HIGH FREQ BAND

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global)
Product Category Bipolar RF Transistors
Product Number 2SC4228-T1-A
Product Name Bipolar RF Transistors
Polarity NPN; NPN
Package Type SOT323; SC-70, SOT-323
IC(max) 35 milliamps
VCEO 10 volts
Power Gain 7.5 dB
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