Renesas Electronics Corporation 2SC4095-T1-A

Description
RF Small Signal Bipolar Transistor
Request a Quote
Description
RF Small Signal Bipolar Transistor
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The 2SC4095 is an NPN silicon epitaxial transistor packaged in a 4-pin mini mold for low-noise amplification in VHF to UHF bands. It features a maximum collector-to-emitter voltage of 10 V, collector current of 35 mA, and total power dissipation of 200 mW. The device has a gain bandwidth product of 10 GHz, noise figure of 1.8 dB at 2.0 GHz, and insertion power gain of 9.5 dB under specified conditions. It meets the "Standard" quality grade for use in communications and consumer electronics. The part is designed for surface mount mounting and supports standard reflow and wave soldering processes with peak temperatures up to 230°C.

Datasheet Summary
Powered by GS/AI

The 2SC4095 is an NPN silicon epitaxial transistor packaged in a 4-pin mini mold for low-noise amplification in VHF to UHF bands. It features a maximum collector-to-emitter voltage of 10 V, collector current of 35 mA, and total power dissipation of 200 mW. The device has a gain bandwidth product of 10 GHz, noise figure of 1.8 dB at 2.0 GHz, and insertion power gain of 9.5 dB under specified conditions. It meets the "Standard" quality grade for use in communications and consumer electronics. The part is designed for surface mount mounting and supports standard reflow and wave soldering processes with peak temperatures up to 230°C.

Suppliers

Company
Product
Description
Supplier Links
 - 2SC4095-T1-A - Rochester Electronics
Newburyport, MA, United States
RF Small Signal Bipolar Transistor

RF Small Signal Bipolar Transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number 2SC4095-T1-A
Package Type Minimold
Unlock Full Specs
to access all available technical data