Renesas Electronics Corporation 2SC3735-T2B-A

Description
RF Small Signal Bipolar Transistor
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Description
RF Small Signal Bipolar Transistor
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Datasheet
Datasheet Summary
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The 2SC3735 is an NPN silicon epitaxial transistor for high-speed switching, mounted in a 3-pin Mini Mold (SC-59) package measuring 2.8 mm × 1.5 mm × 1.1 mm. It has a collector-to-emitter voltage rating of 15 V, a collector current of 200 mA, and a power dissipation of 200 mW. The DC current gain (hFE) ranges from 40 to 200, with a collector saturation voltage of up to 0.25 V. The gain-bandwidth product reaches 750 MHz, and the collector capacitance is 1.8 to 4.0 pF. Switching times are up to 12 ns turn-on, 13 ns storage, and 18 ns turn-off. Junction temperature is rated to 150 °C. It is qualified as 'Standard' for consumer and industrial use and pairs with the 2SA1462.

Datasheet Summary
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The 2SC3735 is an NPN silicon epitaxial transistor for high-speed switching, mounted in a 3-pin Mini Mold (SC-59) package measuring 2.8 mm × 1.5 mm × 1.1 mm. It has a collector-to-emitter voltage rating of 15 V, a collector current of 200 mA, and a power dissipation of 200 mW. The DC current gain (hFE) ranges from 40 to 200, with a collector saturation voltage of up to 0.25 V. The gain-bandwidth product reaches 750 MHz, and the collector capacitance is 1.8 to 4.0 pF. Switching times are up to 12 ns turn-on, 13 ns storage, and 18 ns turn-off. Junction temperature is rated to 150 °C. It is qualified as 'Standard' for consumer and industrial use and pairs with the 2SA1462.

Suppliers

Company
Product
Description
Supplier Links
 - 2SC3735-T2B-A - Rochester Electronics
Newburyport, MA, United States
RF Small Signal Bipolar Transistor

RF Small Signal Bipolar Transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number 2SC3735-T2B-A
Package Type TO-220; TO-220-3
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