Renesas Electronics Corporation Bipolar RF Transistors 2SC3357-T1-A

NPN silicon RF transistor for high-frequency low-noise amplification in a 3-pin power minimold package. It operates with a maximum collector-to-emitter voltage of 12 V, collector current of 100 mA, and total power dissipation of 1.2 W when mounted on a 16 cm² × 0.7 mm ceramic substrate. Designed for applications requiring low noise and high gain, it exhibits a noise figure of 1.1 dB typ. at 1 GHz with IC = 7 mA, and gain-bandwidth product of 6.5 GHz typ. at VCE = 10 V and IC = 20 mA. Junction temperature range is -65 °C to +150 °C.