Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 2SC1213C-E

Description
Win Source Part Number: 1190610-2SC1213C-E Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Bulk Standard Package: 1 Power - Max: 400 mW Voltage - Collector Emitter Breakdown (Max): 35 V Current - Collector (Ic) (Max): 500 mA Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 600mV @ 15mA, 150mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 3V Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92 Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 0000.00.0000 Mfr: Renesas Electronics America Inc Other Names: RENRNS2SC1213C-E,215 6-2SC1213C-E
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1190610-2SC1213C-E - Win Source Electronics
    Win Source Electronics
Request a Quote
Description
Win Source Part Number: 1190610-2SC1213C-E Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Bulk Standard Package: 1 Power - Max: 400 mW Voltage - Collector Emitter Breakdown (Max): 35 V Current - Collector (Ic) (Max): 500 mA Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 600mV @ 15mA, 150mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 3V Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92 Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 0000.00.0000 Mfr: Renesas Electronics America Inc Other Names: RENRNS2SC1213C-E,215 6-2SC1213C-E
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The 2SC1213 series consists of silicon NPN bipolar junction transistors in a TO-92 package, designed for low-frequency amplification and paired with 2SA673 series PNP transistors. The device has a maximum collector-to-emitter voltage of 35 V, a collector current rating of 500 mA, and a maximum power dissipation of 400 mW. The junction temperature rating is 150°C, and the storage temperature ranges from -55°C to +150°C. The DC current gain (hFE) ranges from 60 to 320 at 10 mA collector current and 3 V collector-emitter voltage. Saturation voltage is specified at 0.6 V maximum at 15 mA base current and 150 mA collector current. The package conforms to JEDEC and EIAJ standards and has a mass of 0.25 g.

Datasheet Summary
Powered by GS/AI

The 2SC1213 series consists of silicon NPN bipolar junction transistors in a TO-92 package, designed for low-frequency amplification and paired with 2SA673 series PNP transistors. The device has a maximum collector-to-emitter voltage of 35 V, a collector current rating of 500 mA, and a maximum power dissipation of 400 mW. The junction temperature rating is 150°C, and the storage temperature ranges from -55°C to +150°C. The DC current gain (hFE) ranges from 60 to 320 at 10 mA collector current and 3 V collector-emitter voltage. Saturation voltage is specified at 0.6 V maximum at 15 mA base current and 150 mA collector current. The package conforms to JEDEC and EIAJ standards and has a mass of 0.25 g.

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1190610-2SC1213C-E - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1190610-2SC1213C-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1190610-2SC1213C-E
Win Source Part Number: 1190610-2SC1213C-E Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Bulk Standard Package: 1 Power - Max: 400 mW Voltage - Collector Emitter Breakdown (Max): 35 V Current - Collector (Ic) (Max): 500 mA Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 600mV @ 15mA, 150mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 3V Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92 Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 0000.00.0000 Mfr: Renesas Electronics America Inc Other Names: RENRNS2SC1213C-E,215 6-2SC1213C-E

Win Source Part Number: 1190610-2SC1213C-E
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Bulk
Standard Package: 1
Power - Max: 400 mW
Voltage - Collector Emitter Breakdown (Max): 35 V
Current - Collector (Ic) (Max): 500 mA
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 600mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 3V
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 0000.00.0000
Mfr: Renesas Electronics America Inc
Other Names: RENRNS2SC1213C-E,2156-2SC1213C-E

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Bipolar RF Transistors
Product Number 1190610-2SC1213C-E
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
Polarity NPN
Package Type TO-92; SOT3
IC(max) 500 milliamps
Unlock Full Specs
to access all available technical data