Renesas Electronics Corporation 2SB962-Z-E1-AZ

Description
Transistor
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Description
Transistor
Request a Quote
Datasheet
Datasheet Summary
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The 2SB962-Z is a PNP silicon epitaxial transistor designed for audio frequency amplification and switching, particularly in hybrid integrated circuits. It is packaged in a TO-252 (MP-3Z) case measuring 6.5 mm × 5.0 mm × 4.4 mm. The device has a collector-to-base voltage rating of −40 V, a collector-to-emitter voltage of −30 V, and a collector current rating of −3 A (DC) or −6 A (pulse, PW ≤ 10 ms, duty cycle ≤ 50%). Maximum power dissipation is 2.0 W at 25°C ambient, with a junction temperature limit of 150°C and a storage temperature range of −55°C to +150°C. It features a typical collector-emitter saturation voltage of −0.3 V. The part is classified as 'Standard' quality grade, suitable for consumer and industrial applications but not for life-critical systems.

Datasheet Summary
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The 2SB962-Z is a PNP silicon epitaxial transistor designed for audio frequency amplification and switching, particularly in hybrid integrated circuits. It is packaged in a TO-252 (MP-3Z) case measuring 6.5 mm × 5.0 mm × 4.4 mm. The device has a collector-to-base voltage rating of −40 V, a collector-to-emitter voltage of −30 V, and a collector current rating of −3 A (DC) or −6 A (pulse, PW ≤ 10 ms, duty cycle ≤ 50%). Maximum power dissipation is 2.0 W at 25°C ambient, with a junction temperature limit of 150°C and a storage temperature range of −55°C to +150°C. It features a typical collector-emitter saturation voltage of −0.3 V. The part is classified as 'Standard' quality grade, suitable for consumer and industrial applications but not for life-critical systems.

Suppliers

Company
Product
Description
Supplier Links
 - 2SB962-Z-E1-AZ - Rochester Electronics
Newburyport, MA, United States
Transistor

Transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Transistors
Product Number 2SB962-Z-E1-AZ
Package Type MP-3Z-3
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