Renesas Electronics Corporation Memory 29103BRA

Description
FLASH - NAND, DRAM - LPDDR Memory IC 16Kbit Parallel 85 ns 20-CERDIP
Datasheet
Description
FLASH - NAND, DRAM - LPDDR Memory IC 16Kbit Parallel 85 ns 20-CERDIP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 29103BRA - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
29103BRA
Memory 29103BRA
FLASH - NAND, DRAM - LPDDR Memory IC 16Kbit Parallel 85 ns 20-CERDIP

FLASH - NAND, DRAM - LPDDR Memory IC 16Kbit Parallel 85 ns 20-CERDIP

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 29103BRA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
29103BRA
Integrated Circuits (ICs) - Memory - Memory 29103BRA
IC SRAM 16KBIT PARALLEL 20CERDIP

IC SRAM 16KBIT PARALLEL 20CERDIP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number 29103BRA 29103BRA
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 85 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 16 kbits 16 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71V3557S75PFG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 7.5 ns
Density 4500 kbits
View Details
Memory - RAM - MT5C2568C-25/883C - 1223286-MT5C2568C-25/883C - Win Source Electronics
Specs
Memory Category SRAM Chip
Operating Temperature -55 C (-67 F)
Density 1000 kbits
View Details
2 suppliers
Flash Memory - 1882519 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details