The RMP6N60TI is an N-channel enhancement mode MOSFET in a TO-220F package, designed for high-efficiency switching applications such as switch-mode power supplies and UPS systems. It has a drain-source breakdown voltage of 600 V, a continuous drain current of 6.0 A, and a maximum on-resistance of 1.65 Ω at 10 V gate drive. The device features low gate charge (30 to 35 nC), low reverse transfer capacitance (11 to 18 pF), fast switching, and 100% avalanche energy testing. It meets IEC 60286-3 and RoHS standards.
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RMP6N60TI |
| Product Name | MOSFET |
