Rectron Semiconductor Inc. MOSFET RMP6N60T2

The RMP6N60T2 is an N-channel enhancement mode MOSFET in a TO-220 package, designed for high-efficiency switching applications such as switch-mode power supplies and UPS systems. It has a drain-source breakdown voltage of 600 V, a continuous drain current of 6.0 A, and a maximum on-state resistance of 1.65 Ω at 10 V gate voltage. The device features a low gate charge of up to 35 nC, low reverse transfer capacitance of max 18 pF, fast switching times, and 100% avalanche energy testing. It meets the criteria for improved ESD and dv/dt capability. The part is rated for a drain-source diode forward voltage of 1.4 V and a reverse recovery time of 340 ns. It is qualified for operation with a junction temperature range that supports the specified characteristics under pulse test conditions.