Rectron Semiconductor Inc. MOSFET RMP2N60TI

RMP2N60TI is an N-channel enhancement mode MOSFET in a TO-220F package, designed for high-efficiency switching mode power supplies, electronic lamp ballasts, and UPS applications. It features low gate charge, fast switching, improved ESD and dv/dt capability, and 100% avalanche energy testing. The device has a drain-source breakdown voltage of 600 V, a continuous drain current of 2 A at 25°C, and a typical on-resistance of 4.8 Ω at 10 V gate-source voltage. It meets RoHS standards and is rated for a maximum junction temperature of 150°C.