Rectron Semiconductor Inc. MOSFET RM9926-T

Description
MOSFET SOP-8 MOSFET
Description
MOSFET SOP-8 MOSFET
Datasheet
Datasheet Summary
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The RM9926 is an N-channel enhancement mode power MOSFET in an SOP-8 package, designed for power switching applications including hard-switched and high-frequency circuits. It has a drain-source voltage rating of 20 V and a continuous drain current of 6 A at 25°C, decreasing to 3.8 A at 100°C. The on-state resistance is less than 28 mΩ at a gate-source voltage of 4.5 V and less than 37 mΩ at 2.5 V. The device features a thermal resistance of 100°C/W and operates over a junction and storage temperature range of -55°C to 150°C. Avalanche voltage and current are fully characterized. The part supports pulsed drain current up to 25 A and has a maximum power dissipation of 1.25 W.

Datasheet Summary
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The RM9926 is an N-channel enhancement mode power MOSFET in an SOP-8 package, designed for power switching applications including hard-switched and high-frequency circuits. It has a drain-source voltage rating of 20 V and a continuous drain current of 6 A at 25°C, decreasing to 3.8 A at 100°C. The on-state resistance is less than 28 mΩ at a gate-source voltage of 4.5 V and less than 37 mΩ at 2.5 V. The device features a thermal resistance of 100°C/W and operates over a junction and storage temperature range of -55°C to 150°C. Avalanche voltage and current are fully characterized. The part supports pulsed drain current up to 25 A and has a maximum power dissipation of 1.25 W.

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Sheung Wan, Hong Kong
MOSFET
RM9926-T
MOSFET RM9926-T
MOSFET SOP-8 MOSFET

MOSFET SOP-8 MOSFET

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number RM9926-T
Product Name MOSFET
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