Rectron Semiconductor Inc. MOSFET RM90N30LD-T

The RM90N30LD-T is an N-channel enhancement mode power MOSFET in a TO-252-2L package, designed for applications such as DC/DC converters and synchronous rectifiers. It has a drain-source voltage rating of 30 V and a continuous drain current of 90 A at 25°C, de-rating to 63.6 A at 100°C junction temperature. The on-state resistance is 4.1 mΩ typical at 10 V gate-source voltage and 5.9 mΩ typical at 4.5 V. The device features a maximum power dissipation of 105 W, a single-pulse avalanche energy rating of 380 mJ, and operates from -55°C to 175°C. Thermal resistance junction-to-case is 1.43°C/W. It is 100% UIS tested and meets standard power MOSFET performance requirements for switching applications.