Rectron Semiconductor Inc. MOSFET RM80N60LD-T

The RM80N60LD is an enhancement mode power MOSFET in a TO-252-2L package, designed for PWM and load switching applications. It has a drain-source voltage rating of 60 V and a continuous drain current of 80 A at 25°C, dropping to 56.5 A at 100°C. The on-state resistance is specified at 8.5 mΩ maximum at 10 V gate voltage. The device supports a pulsed drain current of 180 A and handles a single-pulse avalanche energy of 390 mJ. Thermal resistance from junction to case is 1.36°C/W. The package dimensions are 6.50-6.70 mm in length by 6.00-6.20 mm in width, with a height up to 2.40 mm. It is 100% UIS and ∆Vds tested, and operates from -55°C to 175°C. The device meets no specified industry standards beyond its electrical and thermal ratings.