Rectron Semiconductor Inc. MOSFET RM80N60DF

Description
MOSFET DFN MOSFET
Description
MOSFET DFN MOSFET
Datasheet
Datasheet Summary
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The RM80N60DF is an N-Channel Super Trench power MOSFET designed for high-frequency switching and synchronous rectification in DC/DC converters. It features a DFN5X6-8L package and is rated for a drain-source voltage of 60 V, continuous drain current of 80 A, and operates up to 150 °C. The on-resistance is typ. 3.5 mΩ at VGS = 10 V and 4.0 mΩ at VGS = 4.5 V. The device has a total gate charge of 67 nC and includes 100% UIS and Vds testing. It is Pb-free, RoHS compliant, and meets AEC-Q200 qualification standards.

Datasheet Summary
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The RM80N60DF is an N-Channel Super Trench power MOSFET designed for high-frequency switching and synchronous rectification in DC/DC converters. It features a DFN5X6-8L package and is rated for a drain-source voltage of 60 V, continuous drain current of 80 A, and operates up to 150 °C. The on-resistance is typ. 3.5 mΩ at VGS = 10 V and 4.0 mΩ at VGS = 4.5 V. The device has a total gate charge of 67 nC and includes 100% UIS and Vds testing. It is Pb-free, RoHS compliant, and meets AEC-Q200 qualification standards.

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Sheung Wan, Hong Kong
MOSFET DFN MOSFET

MOSFET DFN MOSFET

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number RM80N60DF
Product Name MOSFET
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