Rectron Semiconductor Inc. MOSFET RM80N30LD-T

The RM80N30LD-T is an N-channel enhancement mode power MOSFET in a TO-252-2L package, designed for power switching applications including hard-switched and high-frequency circuits. It has a drain-source voltage rating of 30 V and a continuous drain current of 80 A at 25°C, derating to 50 A at 100°C. The on-state resistance is 6.5 mΩ at Vₓₓ=10 V and 10 mΩ at Vₓₓ=5 V. The device is 100% UIS tested with a single-pulse avalanche energy of 306 mJ. Thermal resistance junction-to-case is 1.8 °C/W. It operates over a junction and storage temperature range of -55°C to 175°C. The package dimensions comply with the standard TO-252-2L footprint. The part meets no specified qualifications beyond the manufacturer's internal testing.