Rectron Semiconductor Inc. MOSFET RM75N60LD-T

The RM75N60LD is an N-channel enhancement mode power MOSFET designed for power switching and high-frequency applications, including uninterruptible power supplies. It is packaged in a TO-252-2L (D-Pak) format, measuring 6.70 mm in length, 6.20 mm in width, and 2.40 mm in height. The device has a drain-source voltage rating of 60 V, a continuous drain current of 75 A at 25°C, and a maximum power dissipation of 110 W. Its on-state resistance is up to 11.5 mΩ at V_{GS} = 10 V, with a typical value of 9.1 mΩ. The gate charge is 50 nC, and it supports single-pulse avalanche energy of 450 mJ. The part fully complies with AEC-Q200 and is 100% UIS and V_{DS} tested. Thermal resistance from junction to case is 1.36°C/W.