Rectron Semiconductor Inc. MOSFET RM6N800TI

Description
MOSFET TO-220F MOSFET
Description
MOSFET TO-220F MOSFET
Datasheet
Datasheet Summary
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RM6N800TI is a MOSFET in the RM6N800 series, housed in a TO-220F package with a maximum drain-source voltage of 800 V, a continuous drain current of 6 A at 25 °C, and a maximum power dissipation of 38 W. It features a low gate threshold voltage and is designed for high-efficiency switching applications. The device meets the RoHS standard and is rated for operation up to 150 °C junction temperature.

Datasheet Summary
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RM6N800TI is a MOSFET in the RM6N800 series, housed in a TO-220F package with a maximum drain-source voltage of 800 V, a continuous drain current of 6 A at 25 °C, and a maximum power dissipation of 38 W. It features a low gate threshold voltage and is designed for high-efficiency switching applications. The device meets the RoHS standard and is rated for operation up to 150 °C junction temperature.

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Sheung Wan, Hong Kong
MOSFET TO-220F MOSFET

MOSFET TO-220F MOSFET

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number RM6N800TI
Product Name MOSFET
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