RM6N800T2 is a MOSFET in a TO-220 package with a drain-source voltage rating of 800 V, a continuous drain current of 6 A at 25 °C, and a gate-source threshold voltage between 2 V and 4 V. It features a package size of 10.16 mm × 4.6 mm × 15.75 mm and is rated for operation up to 150 °C junction temperature. The device complies with the TO-220 packaging standard.
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RM6N800T2 |
| Product Name | MOSFET |
