The RM6N800HD-T is a MOSFET in a D2-PAK package designed for high-voltage switching applications with low conduction losses. It supports a drain-source voltage rating of 800 V and a continuous drain current of 6 A at 25°C. The device features a low gate charge of 19 nC and a typical on-resistance of 0.85 Ω at 10 V gate-source voltage. It operates within a junction temperature range of -55°C to 150°C and meets RoHS standards. The part is qualified for automotive applications under AEC-Q200.
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RM6N800HD-T |
| Product Name | MOSFET |
