The RM60P04Y is a P-channel enhancement mode power MOSFET designed for load switching and PWM applications. It is packaged in SOT-23-3L with dimensions specified in millimeters, excluding mold flash and gate burrs. The device has a drain-source voltage rating of -60 V, a continuous drain current of -4 A, and a maximum power dissipation of 1.5 W. Its on-state resistance is less than 120 mΩ at -10 V gate-source voltage and less than 170 mΩ at -4.5 V. The thermal resistance junction-to-ambient is 83.3 °C/W. It meets operating junction and storage temperature range from -55 °C to 150 °C. The part is not certified to any listed standards such as AEC-Q200 or RoHS in the provided data.
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RM60P04Y-T |
| Product Name | MOSFET |
