Rectron Semiconductor Inc. MOSFET RM6003

The RM6003 is an N-channel enhancement mode Power MOSFET in a SOT-23-3L surface mount package, designed for battery protection and DC/DC switching applications. It has a drain-source voltage rating of 60 V, a continuous drain current of 3 A, and a maximum power dissipation of 1.7 W. The on-state resistance is 105 mΩ at 10 V gate voltage and 125 mΩ at 4.5 V gate voltage. The device features a gate threshold voltage range of 1.0 to 1.9 V, a total gate charge of 6 nC, and operates within a junction and storage temperature range of -55°C to 150°C. It meets RoHS standards for lead-free composition.