The RM5N60S4 is an N-channel enhancement mode power MOSFET in a SOT-223-3L package, designed for power switching applications including hard-switched and high-frequency circuits. It has a drain-source voltage rating of 60 V and a continuous drain current of 5 A at 25°C, reducing to 3.5 A at 100°C. The on-state resistance is 46 mΩ typical at V_GS = 10 V and 60 mΩ typical at V_GS = 4.5 V. The device is AEC-Q101 qualified, with a junction and storage temperature range of -55°C to 150°C, and a thermal resistance of 62.5°C/W. Maximum power dissipation is 2 W.
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RM5N60S4 |
| Product Name | MOSFET |
