Rectron Semiconductor Inc. MOSFET RM50N60LD-T

The RM50N60LD-T is an N-channel enhancement mode power MOSFET designed for power switching applications, including hard-switched and high-frequency circuits and uninterruptible power supplies. It comes in a TO-252-2L package with dimensions of 6.50 to 6.70 mm in length and 6.00 to 6.20 mm in width. The device features a drain-source voltage rating of 60 V, a continuous drain current of 50 A at 25°C, and an on-state resistance of 16 to 20 mΩ at 10 V gate-source voltage. It is qualified to AEC-Q101 standards and supports single-pulse avalanche energy up to 300 mJ. The thermal resistance from junction to case is 1.8°C/W.