Rectron Semiconductor Inc. MOSFET RM50N60DF

The RM50N60DF is an N-channel enhancement mode Power MOSFET designed for PWM and load switching applications. It is packaged in a DFN5X6-8L case with dimensions of 5.0 mm × 6.0 mm and features a drain-source voltage rating of 60 V and a continuous drain current of 50 A at 25°C. The device has a drain-source on-state resistance of 16 mΩ at V_GS = 10 V and 18 mΩ at V_GS = 4.5 V, with a maximum power dissipation of 104 W. It is 100% UIS and ΔVds tested, with a single pulse avalanche energy of 390 mJ and a thermal resistance junction-to-case of 1.2°C/W. The operating junction and storage temperature range is -55°C to 150°C, and it is halogen-free. The part meets the AEC-Q200 standard and is RoHS compliant.