The RM4N700LD is an N-channel super junction MOSFET in a TO-252 package, designed for AC-DC SMPS, PFC, and industrial power applications. It has a 700 V drain-source voltage rating, a typical on-resistance of 1200 mΩ at 10 V gate bias, and a continuous drain current of 2.5 A at 100°C case temperature. The device features low gate charge (6.5 to 10 nC), 100% avalanche tested with 130 mJ single pulse energy, and operates from -55°C to +150°C junction temperature. It meets RoHS compliance standards. The TO-252 package measures 6.50 to 6.70 mm in length, 6.00 to 6.20 mm in width, and has a lead pitch of 2.186 to 2.386 mm. Thermal resistance from junction to case is 2.7 °C/W.
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RM4N700LD-T |
| Product Name | MOSFET |
