Rectron Semiconductor Inc. MOSFET RM4N650T2

The RM4N650T2 is an N-channel super junction power MOSFET in a TO-220 package, designed for AC-DC switching power supplies, power factor correction, and industrial power applications. It has a drain-source voltage rating of 650 V, a continuous drain current of 4 A at 25°C, and a maximum on-resistance of 1200 mΩ at 10 V gate voltage. The device features ultra-low gate charge of 6.5 to 10 nC, enabling reduced driving requirements. It is avalanche-tested with a single-pulse avalanche energy of 130 mJ and operates over a junction temperature range of -55°C to +150°C. The thermal resistance from junction to case is 2.7 °C/W and from junction to ambient is 62 °C/W. The part is RoHS compliant.