Rectron Semiconductor Inc. MOSFET RM4N650LD-T

The RM4N650LD is an N-channel super junction MOSFET designed for AC-DC power factor correction and switched-mode power supplies. It is packaged in a TO-252 case with a continuous drain current rating of 4 A at 25°C junction temperature and 2.5 A at 100°C, and a maximum drain-source voltage of 650 V. The device has a maximum on-resistance of 1200 mΩ at 10 V gate-source voltage and 2.5 A drain current, with a total gate charge of up to 10 nC. It is rated for 46 W maximum power dissipation at 25°C with a junction-to-case thermal resistance of 2.7 °C/W and includes 100% avalanche testing. The part is RoHS compliant and supports operating junction and storage temperatures from -55°C to +150°C.