The RM4N500LD-T is an N-channel power MOSFET in a TO-252 package, rated for 500 V drain-source voltage and 4 A continuous drain current, with a maximum on-state resistance of 1.5 Ω at VGS = 10 V. It features 100% avalanche testing, a single pulsed avalanche energy rating of 300 mJ, and a junction temperature range of -55°C to +150°C. Thermal resistance is 2.1°C/W from junction to case and 110°C/W from junction to ambient. The device is designed for applications including active power factor correction and switched-mode power supplies.
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RM4N500LD-T |
| Product Name | MOSFET |
