The RM4A3P303L is a P-channel enhancement mode power MOSFET designed for load switching and PWM applications. It is packaged in an SOT-23-3L surface mount case, with dimensions compliant to the SOT-23-3L specification. The device has a drain-source voltage rating of -30 V, a continuous drain current of -4.3 A, and a maximum power dissipation of 1.5 W. Its on-state resistance is 52 mΩ at -10 V gate-source bias and 90 mΩ at -4.5 V. Thermal resistance junction-to-ambient is 84 °C/W. The device meets RoHS requirements for lead-free composition. Operating temperature range is -55 °C to 150 °C.
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RM4A3P303L |
| Product Name | MOSFET |
