Rectron Semiconductor Inc. MOSFET RM4606S8-T

The RM4606S8-T is a complementary N- and P-channel enhancement mode MOSFET in an SOP-8 surface mount package, designed for high-side switching and similar applications. The N-channel device has a drain-source voltage rating of 30 V and a continuous drain current of 6.5 A at 25°C, with a drain-source on-state resistance of up to 30 mΩ at V_GS = 10 V. The P-channel device has a drain-source voltage rating of -30 V and a continuous drain current of -7 A at 25°C, with a drain-source on-state resistance of up to 33 mΩ at V_GS = -10 V. It features a thermal resistance of 62.5°C/W for both channels, an operating junction temperature range of -55°C to 150°C, and a lead-free construction. The device meets RoHS standards and is housed in an SOP-8 package with dimensions of 5.1 mm × 6.2 mm × 1.75 mm.