Rectron Semiconductor Inc. MOSFET RM40P40LD-T

The RM40P40LD is a P-channel enhancement mode power MOSFET in a TO-252-2L package, designed for high current load applications such as power switching and uninterruptible power supplies. It has a drain-source voltage rating of -40 V and a continuous drain current of -40 A at 25°C, reducing to -25 A at 100°C. The device features a maximum RDS(ON) of 14 mΩ at -10 V gate-source voltage and dissipates up to 80 W with a thermal resistance junction-to-case of 1.88°C/W. It is 100% UIS and ∆Vds tested, with avalanche energy capability of 544 mJ and operates from -55°C to 175°C. The part is halogen-free and meets AEC-Q101 qualification when designated with the V suffix. Dimensions are 6.50-6.70 mm by 6.00-6.20 mm with a lead spacing of 2.186-2.386 mm.