Rectron Semiconductor Inc. MOSFET RM40N100LD-T

The RM40N100LD-T is an N-channel enhancement mode Power MOSFET in a TO-252-2L package, designed for power switching and high-frequency circuits. It has a drain-source voltage rating of 100 V and a continuous drain current of 40 A at 25°C, reducing to 28 A at 100°C. The typical on-state resistance is 14.5 mΩ at 10 V gate drive. The device supports single-pulse avalanche energy up to 520 mJ and is 100% UIS tested. Thermal resistance junction-to-case is 1.07°C/W. The TO-252-2L package measures 6.50 to 6.70 mm in body length and 6.00 to 6.20 mm in width. It meets RoHS standards and is rated for operating junction and storage temperatures from -55°C to 175°C.