Rectron Semiconductor Inc. MOSFET RM3A6N30S2

The RM3A6N30S2 is an N-channel enhancement mode power MOSFET designed for load switching and PWM applications. It is packaged in an SOT-23 surface mount package with dimensions of 2.80 to 3.00 mm in length, 1.20 to 1.40 mm in width, and 0.90 to 1.15 mm in height. The device has a drain-source voltage rating of 30 V, a continuous drain current of 3.6 A, and a maximum power dissipation of 1.7 W. Its on-state resistance is 58 mΩ maximum at V_GS=10 V and 73 mΩ maximum at V_GS=4.5 V. The thermal resistance from junction to ambient is 73.5 °C/W. It operates from -55 °C to 150 °C and meets RoHS standards for lead-free composition.