Rectron Semiconductor Inc. MOSFET RM35N30DF

The RM35N30DF is an N-channel enhancement mode power MOSFET designed for applications such as synchronous rectification and high-side switching in POL DC/DC converters. It is packaged in a DFN 5x6 EP style with a thermal pad for improved heat dissipation. The device has a drain-source voltage rating of 30 V, a continuous drain current of 35 A, and a pulsed drain current of 120 A. Its on-state resistance is less than 7.0 mΩ at a gate-source voltage of 10 V and less than 12 mΩ at 4.5 V. It is AEC-Q101 qualified, meets RoHS standards, and is halogen-free. The device has been 100% UIS tested and features avalanche ruggedness with a single pulse avalanche energy of 150 mJ. The operating junction and storage temperature range is from -55°C to 150°C.